elektronische bauelemente 2SB1386 -5a, -30v pnp silicon low frequency transistor 10-dec-2010 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low v ce (sat) excellent dc current gain characteristics complements the 2sd2098 classification of h fe product-rank 2SB1386-p 2SB1386-q 2SB1386-r range 82~180 120~270 180~390 marking bhp bhq bhr package information package mpq leadersize sot-89 1k 7 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v -5 a(dc) collector current -continuous i c -10 a(pulse) (1) 0.5 collector power dissipation p d 2 w (2) junction & storage temperature t j , t stg 150, -55~150 c note: (1) single pulse, pw=10ms. (2) when mounted on a 40 ? 40 ? 0.7 mm ceramic board. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -30 - - v ic=-50 a collector-emitter breakdown voltage v (br)ceo -20 - - v i c = -1ma emitter-base breakdown voltage v (br)ebo -6 - - v i e = -50 a collector cut-off current i cbo - - -0.5 a v cb = -20v emitter cut-off current i ebo - - -0.5 a v eb = -5v collector-emitter saturation voltage v ce(sat) - - -1.0 v i c /i b = -4a/-0.1a * dc current gain * h fe 82 - 390 v ce = -2v, i c = -0.5a * transition frequency f t - 120 - mhz v ce = -6v, i e = -50ma, f=30mhz output capacitance c ob - 60 - pf v cb = -20v, i e =0, f=1mhz ? measured using pulse current. sot-89 a e c d b k h f g l j 1 2 3 4 millimeter milli meter ref. min. max. ref. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.2 0
elektronische bauelemente 2SB1386 -5a, -30v pnp silicon low frequency transistor 10-dec-2010 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente 2SB1386 -5a, -30v pnp silicon low frequency transistor 10-dec-2010 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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